三甲基铟
铟
金属有机气相外延
蓝宝石
材料科学
异质结
光电子学
基质(水族馆)
铟镓氮化物
氮化铟
外延
氮化镓
纳米技术
图层(电子)
光学
激光器
生物
物理
生态学
作者
Yanyan Guo,X.L. Liu,Haipeng Song,Anli Yang,Xiaoqing Xu,Guanhaojie Zheng,Hongyuan Wei,Shaoyan Yang,Qianyi Zhu,Z.G. Wang
标识
DOI:10.1016/j.apsusc.2009.11.081
摘要
InGaN/GaN heterostructures have been deposited onto (0 0 0 1) sapphire by our home-made low pressure MOVPE with different growth parameters. It has been noted that the indium incorporation depends by a complex way on a number of factors. In this work, the effect of substrate temperature, trimethylindium input flow and V/III ratio on the indium incorporation has been investigated. Finally, by optimizing the growth parameters, we made a series of single-phase InGaN samples with indium content from 10% up to 45%.
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