Two-dimensional type-II XSi2P4/MoTe2 (X = Mo, W) van der Waals heterostructures with tunable electronic and optical properties

The type-II MoSi 2 P 4 /MoTe 2 (WSi 2 P 4 /MoTe 2 ) possesses a direct bandgap of 0.258 eV (0.363 eV) at the PBE level and shows promise for application in the nanoelectronic and optoelectronic fields.