磷化铟
量子点
光致发光
铟
半最大全宽
红外线的
发光
材料科学
近红外光谱
纳米技术
光电子学
光学
物理
砷化镓
作者
Qingtao Hou,Zhonglin Du,Jianguo Tang,Jizhou Kong,Yixiao Huang,Keke Wang,Jiajia Ning,Jian Tang
标识
DOI:10.1021/acs.jpclett.4c00158
摘要
The development of indium phosphide (InP)-based quantum dots (QDs) with a near-infrared (NIR) emission area still lags behind the visible wavelength region and remains problematic. This study describes a one-step in situ pseudohalogen ammonium salt-assisted approach to generate NIR-emitted InP-based QDs with high photoluminescence quantum yields (PLQYs). The coexistence of NH4+ and PF6- ions from NH4PF6 may in situ synchronously etch and passivate the surface oxides and impede the creation of traps under the whole growth process of InP QDs. Experimental findings demonstrated that the in situ pseudohalogen ammonium salt-assisted syntheses technique may feature emission at a full width at half-maximum (fwhm) peak as fine as ∼45 nm and broaden the emission range to around ∼780 nm. A two-step approach for ZnS shells was developed to further improve the PLQY of NIR-emitted InP QDs. Furthermore, the constructed high-power intrinsically stretchable NIR color-conversion film employing the InP-based QDs/polymer composites presented excellent luminescence conversion ability and stretchability.
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