Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies

Silicon-on-insulator (SOI) technology, with its high radio frequency (RF) performance, high digital density, and high-volume manufacturability, is a serious contender for the new technological challenges brought by the 5G telecommunication standard, in particular in the millimeter-wave (mm-wave) spectrum. This chapter reviews key SOI-based circuits at mm-wave frequencies present in an RF front-end module (FEM) switch, low noise amplifier (LNA) and power amplifier (PA). An example of link budget analysis in an arbitrary 5G deployment context is presented to derive typical values for the main figures of merit (FoMs) of the FEM building blocks (switch, LNA, PA). For each building block, the main circuit architectures are presented and state-of-the-art circuits in SOI technology are reviewed. The strengths and weaknesses of SOI-based circuits are linked to transistor performance and explained at physical level in terms of transistor behavior. Overall, mm-wave circuits in SOI technology have demonstrated great FoMs, enabling a successful integration of SOI-based FEMs for 5G applications.