铁磁性
凝聚态物理
自旋电子学
极化(电化学)
拓扑绝缘体
铁磁性
反铁磁性
磁化
拓扑(电路)
材料科学
物理
磁场
化学
数学
物理化学
量子力学
组合数学
作者
X.G. Liu,Wei-xiao Ji,Meng Ding,Shengshi Li,Changwen Zhang
摘要
Two-dimensional (2D) ferromagnetic and antiferromagnetic second-order topological insulators (SOTIs) coexisting with valley polarization have received increasing attention recently, while 2D valley-polarized ferrimagnetic (ferri-valley) SOTI has not been reported yet. In this work, we propose an effective six-band tight-binding model based on structural symmetry to confirm the possibility of coexistence of ferrimagnetism, second-order topological corner states, and valley polarization in 2D systems, and predict Mo2CSCl monolayer as the robust 2D ferri-valley SOTI with good structural stability, considerable Curie temperature estimated to be 100 K, and distinct valley polarization up to 109 meV under out-of-plane exchange field based on our model and first-principles calculations. Also, we find that the spin polarization direction of corner states combined with valley polarization can be controlled by switching the direction of the magnetization direction using an external magnetic field. These findings of the combination of intrinsic ferrimagnetism, second-order topological properties, and valley polarization in single 2D materials provide an ideal platform for practical applications in multifield-control spintronic devices.
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