Spin-orbit torque effect in silicon-based sputtered Mn3Sn film

Abstract Non-collinear antiferromagnet Mn 3 Sn has shown remarkable efficiency in charge-spin conversion, a novel magnetic spin Hall effect, and a stable topological antiferromagnetic state, which has resulted in great interest from researchers in the field of spin orbit torque. Current research has primarily focused on the spin orbit torque effect of epitaxially grown non-collinear antiferromagnet Mn 3 Sn films. However, this method is not suitable for large-scale industrial preparation. In this study, amorphous Mn 3 Sn films and Mn 3 Sn/Py heterostructures were prepared using a magnetron sputtering on silicon substrates. The spin torque-ferromagnetic resonance measurement demonstrated that only the conventional spin orbit torque effect generated by inplane polarized spin currents exists in the Mn 3 Sn/Py heterostructure, with a spin-orbit torque efficiency of 0.016. Additionally, we prepared the perpendicular magnetized Mn 3 Sn/CoTb heterostructure based on amorphous Mn 3 Sn film, where the spin-orbit torque driven perpendicular magnetization switching was achieved with a lower critical switching current density (3.9×10 7 A/cm 2 ) compared to Ta/CoTb heterostructure. This research reveals the spin-orbit torque effect of amorphous Mn 3 Sn films and establishes a foundation for further advancement in the practical application of Mn 3 Sn materials in spintronic devices.