材料科学
原子层沉积
沉积(地质)
图层(电子)
半导体工业
制作
涂层
蚀刻(微加工)
原子层外延
纳米技术
光刻胶
工程物理
制造工程
工程类
古生物学
沉积物
生物
医学
替代医学
病理
作者
Sumaira Yasmeen,Seung Wook Ryu,Sung‐Hoon Lee,Han‐Bo‐Ram Lee
标识
DOI:10.1002/admt.202200876
摘要
Abstract Atomic layer deposition (ALD) is well known as the most advanced coating technique so far due to its unique deposition characteristics, such as uniformity and 3D conformality. ALD is not limited to coating technologies alone; however, over the past few decades, it has been extended beyond coating technologies to address several bottlenecks in the semiconductor industry. This short review article provides a summary of previous studies published on various approaches to using ALD to overcome the technological challenges in Si device fabrication beyond, that is, ALD for multiple patterning, area‐selective atomic layer deposition, atomic layer etching, and ALD for dry photoresist. The purpose of this review is to determine the existing trend in ALD for noncoating applications and to understand and provide a layout of what ALD can bring in the future. In addition, it helps in appreciating the potential of ALD in existing and future noncoating processes. Furthermore, this study provides a developing route for ALD in other noncoating applications in the semiconductor industry. This review may help ALD researchers in its use in various noncoating processes in the future to extend Moore's law.
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