Anisotropic charge transfer and gate tuning for p-SnS/n-MoS2 vertical van der Waals diodes

p-SnS/n-MoS 2 van der Waals heterostructure diodes with an ideality factor of ∼ 1.1 and high rectification ratio have been achieved, where a strong gate-dependent anisotropic rectification property has been tuned with the SnS channel length.