Berry Curvature Dipole Induced Giant Mid‐Infrared Second‐Harmonic Generation in 2D Weyl Semiconductor

Abstract Due to its inversion‐broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second‐harmonic generation response is acquired from 2D Te with a large second‐order nonlinear optical susceptibility ( χ (2) ), which is up to 23.3 times higher than that of monolayer MoS 2 in the range of 700–1500 nm. Notably, distinct from other 2D nonlinear semiconductors, χ (2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V −1 at ≈2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ (2) of 2D Te also enables the high‐intensity sum‐frequency generation with an ultralow continuous‐wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.