材料科学
薄膜
云母
光电子学
电导率
X射线光电子能谱
基质(水族馆)
弯曲半径
弯曲
薄板电阻
纳米技术
复合材料
图层(电子)
化学工程
化学
物理化学
工程类
地质学
海洋学
作者
Kuo Ouyang,Tianhao Duan,Wenqiang Huang,Qian Zhan,Peng Chen,Limei Jiang,Lizhong Sun,Yichun Zhou,Jiajia Liao,Qiong Yang,Jie Jiang
出处
期刊:Acta Materialia
[Elsevier]
日期:2023-11-01
卷期号:260: 119334-119334
被引量:3
标识
DOI:10.1016/j.actamat.2023.119334
摘要
Ultra-thin ITO films exhibit excellent optical properties but poor electrical properties, which greatly limit further applications in the field of optoelectronic devices. In this study, a large-area (4 inches) ITO thin film with a thickness of 10 nm was prepared on a flexible Mica substrate. The film shows low resistivity (1.32×10−4 Ω·cm), high carrier concentration (2.2 × 1021 cm−3), high optical transparency (>98.1%), and an atomic-level flat surface. XPS characterization and first principles calculations prove that the van der Waals interface between ITO and Mica can induce a higher concentration of oxygen vacancies in the ultra ITO thin film, which is the reason for its remarkable conductivity enhancement. In addition, the ITO/Mica flexible film exhibits excellent durability and recyclability, maintaining its photoelectric properties at a high bending radius of 2.5 mm and tens of thousands of bending cycles. This study will provide an important experimental basis for the further development and application of large-area, ultra-thin ITO films in flexible transparent electronic devices.
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