薄膜晶体管
材料科学
光电子学
欧姆接触
无定形固体
电阻率和电导率
电极
溅射
阈值电压
晶体管
薄膜
电压
复合材料
电气工程
纳米技术
化学
图层(电子)
结晶学
物理化学
工程类
作者
Tae‐Young Kim,Yoonsok Kim,Juntae Ahn,Eun Kyu Kim
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2023-07-11
卷期号:5 (7): 3772-3779
标识
DOI:10.1021/acsaelm.3c00508
摘要
We have studied the effect of barrier-controlled electrodes on characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using an interlayer with modulated oxygen defects. Interlayers of a-IGZO with different electrical resistivities were controlled with various oxygen ratios during the RF sputtering deposition. As the ratio of O2/(O2 + Ar) was increased from 0 to 20%, the carrier concentration decreased from 2.84 × 1018 to 1.56 × 1014 cm–3 and the electrical resistivity increased from 0.12 to 9600 Ω·cm. Using this result, a-IGZO thin layers with different resistivities (low and high) to control the contact barriers were inserted between the a-IGZO TFT channel and both the source and drain electrodes. In the case of a-IGZO TFT with a low resistivity interlayer, the threshold voltage (Vth) was shifted by −4.1 V compared to the reference device without an interlayer. In addition, on/off ratio, the subthreshold swing, and the mobility of the devices were also enhanced by achieving Ohmic contact. In contrast, the a-IGZO TFT with a high resistivity interlayer showed a positive Vth shift of 1.5 V and also improved device performance, while maintaining a mobility of ∼84% of the reference device due to the energy barrier.
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