Highly Reliable and Manufacturable MRAM embedded in 14nm FinFET node

We demonstrated highly reliable and manufacturable 16Mb magnetic random access memory (eMRAM) embedded in 14nm FinFET logic by achieving high yield over 90% at an operating temperature ranging from $-40^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ and passing the PKG reliability tests, such as HTOL and endurance 10 ⁶ cycles. In addition, for automotive application and further scaling down, we confirmed the function of eMRAM macro at the elevated temperature of $160^{\circ}\mathrm{C}$, and achieved the low short fail of 1ppm level for sub 10nm eMRAM pitch using the novel patterning technology, respectively.