记忆电阻器
材料科学
光电子学
铁电性
电光效应
光功率
光开关
非易失性存储器
光学计算
神经形态工程学
光学
电子工程
计算机科学
电介质
物理
电场
工程类
量子力学
激光器
机器学习
人工神经网络
作者
Yiyang Wen,Cao Yi-lin,Hong‐Da Ren,Xiaona Du,Jiaxing Guo,Zhenping Wu,Weiwei Liu,Jiangbing Du,Yang Zhang
标识
DOI:10.1002/adma.202417658
摘要
Abstract Memristors enable non‐volatile memory and neuromorphic computing. Optical memristors are the fundamental element for programmable photonic integrated circuits due to their high‐bandwidth computing, low crosstalk, and minimal power consumption. Here, an optical memristor enabled by a non‐volatile electro‐optic (EO) effect, where refractive index modulation under zero field is realized by deliberate control of domain alignment in the ferroelectric material Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 (PMN‐PT) is proposed. The non‐volatile EO memristor is designed exclusively for the modulation of the optical phase without degrading the optical transparency, and it allows the support for deterministic and repeated non‐volatile multilevel EO states. A non‐volatile tunable waveplate composed of the optical memrisor for free‐space optics, which allows for deterministic multilevel, and non‐volatile phase shifts from 0 to π /2 is presented. The state switching rate of the memristor is less than 100 ms, with a switching energy consumption of 234 nJ, and the states can be retained for up to 12 h without requiring static power consumption. These results demonstrate a novel approach to fully realizing non‐volatile optical memristors, where only optical phase modulation is involved, providing unprecedented opportunities for the development of new ferroelectric memristors.
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