过电位
化学
活动站点
掺杂剂
法拉第效率
兴奋剂
可逆氢电极
旋转环盘电极
电化学
无机化学
材料科学
电极
电催化剂
物理化学
催化作用
工作电极
光电子学
生物化学
作者
Ashmita Biswas,Mamta Devi Sharma,Samadhan Kapse,Surajit Samui,Ranjit Thapa,Santosh K. Gupta,K. Sudarshan,Ramendra Sundar Dey
出处
期刊:Small
[Wiley]
日期:2024-06-19
标识
DOI:10.1002/smll.202402006
摘要
Abstract Doping is considered a promising material engineering strategy in electrochemical nitrogen reduction reaction (NRR), provided the role of the active site is rightly identified. This work concerns the doping of group VIB metal in Ag 3 PO 4 to enhance the active site density, accompanied by d‐p orbital mixing at the active site/N 2 interface. Doping induces compressive strain in the Ag 3 PO 4 lattice and inherently accompanies vacancy generation, the latter is quantified with positron annihilation lifetime studies (PALS). This eventually alters the metal d‐electronic states relative to Fermi level and manipulate the active sites for NRR resulting into side‐on N 2 adsorption at the interface. The charge density deployment reveals Mo as the most efficient dopant, attaining a minimum NRR overpotential, as confirmed by the detailed kinetic study with the rotating ring disk electrode (RRDE) technique. In fact, the Pt ring of RRDE fails to detect N 2 H 4 , which is formed as a stable intermediate on the electrode surface, as identified from in‐situ attenuated total reflectance‐infrared (ATR‐IR) spectroscopy. This advocates the complete conversion of N 2 to NH 3 on Mo/Ag 3 PO 4 ‐10 and the so‐formed oxygen vacancies formed during doping act as proton scavengers suppressing hydrogen evolution reaction resulting into a Faradaic efficiency of 54.8% for NRR.
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