材料科学
热电效应
塞贝克系数
凝聚态物理
基质(水族馆)
热导率
外延
薄膜
电子迁移率
声子
Crystal(编程语言)
光电子学
纳米技术
复合材料
热力学
物理
计算机科学
海洋学
地质学
程序设计语言
图层(电子)
作者
Takafumi Ishibe,Atsuki Tomeda,Yuki Komatsubara,Reona Kitaura,Mutsunori Uenuma,Yukiharu Uraoka,Yuichiro Yamashita,Yoshiaki Nakamura
摘要
We develop transparent epitaxial SnO2 films with low thermal conductivity and high carrier mobility by domain engineering using the substrates with low symmetry: intentional control of the domain size and the defect density between crystal domains. The epitaxial SnO2 films on r-Al2O3 (a low symmetry substrate) exhibit a twice higher mobility than the epitaxial SnO2 films on c-Al2O3 (a high symmetry substrate), resulting in twice larger thermoelectric power factor in the SnO2 films on r-Al2O3. This mobility difference is likely attributed to the defect density between crystal domains. Furthermore, both samples exhibit almost the same thermal conductivities (∼5.1 ± 0.4 W m−1 K−1 for SnO2/r-Al2O3 sample and ∼5.5 ± 1.0 W m−1 K−1 for SnO2/c-Al2O3 sample), because their domain sizes are almost the same. The uni-leg type film thermoelectric power generator composed of the domain-engineered SnO2 film generates the maximum power density of ∼54 μW m−2 at the temperature difference of 20 K. This demonstrates that a transparent film thermoelectric power generator based on the domain engineering is promising to run some internet of things sensors in our human society.
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