材料科学
铁电性
薄膜晶体管
光电子学
电介质
晶体管
阈下斜率
场效应晶体管
图层(电子)
电压
纳米技术
电气工程
工程类
作者
Md Mehedi Hasan,Mohit Mohit,Jinbaek Bae,Eisuke Tokumitsu,Hye-Yong Chu,Sung Chul Kim,Jin Jang
摘要
There is increasing interest in a ferroelectric transistor, mainly using vacuum processed hafnium oxide based materials. We report in this paper a solution processed ZnO thin-film transistor (TFT) with improved ferroelectric performance in Hf0.5Zr0.5O2 (HZO) using a triple layer of ZrOx/HZO/AlOx by spray pyrolysis. The performance enhancement is due to the difference in thermal expansion coefficient between the bottom/top dielectric and HZO layers. Grazing incident x-ray diffraction, current–voltage, capacitance–voltage, polarization–voltage, and anticlockwise hysteresis in transfer curve confirm the excellent ferroelectricity of the triple layer. A memory window as large as ∼3 V, the maximum on/off ratio of 3.5 × 109, the field-effect mobility of 125 cm2/V s, and the subthreshold slope of 0.18 V/decade were obtained from the ZnO TFT with the ZrOx/HZO/AlOx gate insulator, demonstrating the high performance ferroelectric ZnO TFT. This result can open opportunities for ferroelectric oxide TFT for large area electronics on glass, including display.
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