神经形态工程学
材料科学
记忆电阻器
纳米技术
电阻随机存取存储器
非易失性存储器
计算机科学
制作
异质结
人工神经网络
光电子学
电气工程
电压
人工智能
电子工程
替代医学
病理
工程类
医学
作者
Kanghong Liao,Peixian Lei,Meilin Tu,Songwen Luo,Ting Jiang,Wenjing Jie,Jianhua Hao
标识
DOI:10.1021/acsami.1c07665
摘要
A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and technological applications because of their great potential in the development of high-density memory technology and neuromorphic computing. Benefiting from the unique two-dimensional (2D) layered structure and outstanding properties, 2D materials have proven to be good candidates for use in gate-tunable, highly reliable, heterojunction-compatible, and low-power memristive devices. More intriguing, stable and reliable nonvolatile RS behaviors can be achieved in multi- and even monolayer 2D materials, which seems unlikely to be achieved in traditional oxides with thicknesses less than a few nanometers because of the leakage currents. Moreover, such two-terminal devices show a series of synaptic functionalities, suggesting applications in simulating a biological synapse in the neural network. In this review article, we summarize the recent progress in memristors based on inorganic and organic 2D materials, from the material synthesis, device structure and fabrication, and physical mechanism to some versatile memristors based on diverse 2D materials with good RS properties and memristor-based synaptic applications. The development prospects and challenges at the current stage are then highlighted, which is expected to inspire further advancements and new insights into the fields of information storage and neuromorphic computing.
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