Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications

In this letter, Ta ₂ O ₅ /WO ₃ double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO ₃ layer modulates the oxygen vacancy distribution in Ta ₂ O ₅ and induces digital-to-analog switching behavior. Excellent AC endurance of (>10 ⁹ cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 10 ⁴ cycles with 4 mm bending, stable retention (>10 ⁶ s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta ₂ O ₅ /WO ₃ design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.