高分辨率透射电子显微镜
纳米晶
离子键合
材料科学
导电体
电解质
透射电子显微镜
纳米尺度
纳米技术
导线
快离子导体
扫描隧道显微镜
相(物质)
化学物理
量子隧道
电极
光电子学
化学
离子
复合材料
物理化学
有机化学
作者
Z. Xu,Yoshio Bando,W. Wang,Xuedong Bai,Dmitri Golberg
摘要
The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memories have been attributed to repetitive formation and breakage of the conductive pathways inside a solid electrolyte. However, direct evidence of such pathway existence and their formations has never been provided. Herein, we reproduced the switching behavior of a Ag/Ag(2)S/W sandwich structure inside a high-resolution transmission electron microscope equipped with a scanning tunneling microscope unit. The on/off current ratio of 5 orders of magnitude was documented. The in situ formation and breakage of a nanoscale conductive channel were ultimately verified in real time and under atomic resolution. We found that a conducting Ag(2)S argentite phase and a Ag nanocrystal together formed the ionic and electronic conductive channel. The preferential atomic sites for Ag nanocrystal growth within the argentite phase were finally clarified.
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