Structural and chemical analysis of C : H,O /Si : H,O multilayers deposited by reactive RF sputtering

Hydro-oxygenated carbon (C : H,O) and silicon (Si : H,O) layers are deposited by RF sputtering of graphite and silicon targets in a mixture of argon, hydrogen and oxygen gases. C : H,O/Si : H,O/C : H,O/Si : H,O... multilayers are obtained by sequential deposition of C : H,O and Si : H,O layers. Infrared (IR) spectroscopy, Grazing Incidence X-ray Diffraction (GIXD) and X-ray Photoelectron Spectroscopy (XPS) techniques have been used to analyse the formed multilayers. The IR spectra made on as deposited structures show the presence of SiC, SiO, CO, SiH, CH and CC bonds. This result indicates an interfacial reactivity between Si : H,O and C : H,O layers. The latter result is confirmed by the XPS measurements. After an annealing at 850°c for two hours under argon atmosphere (10-3 mbar), the concentration of the SiC bonds is increased by a factor two while the SiH and CH bonds disappear complet The GIXD measurements show that the multilayers are amorphous when annealed below 750°C, and they are crystallized with the formation of the α-SiC phase if the heat treatment is made at 850°C. The mean size of the microcrystallites is 50 Å about.