材料科学
微晶
四方晶系
开裂
单斜晶系
陶瓷
结晶学
相容性(地球化学)
马氏体
电子背散射衍射
衍射
复合材料
晶体结构
冶金
微观结构
光学
化学
物理
作者
Edward L. Pang,Caitlin A. McCandler,Christopher A. Schuh
标识
DOI:10.1016/j.actamat.2019.07.028
摘要
Cracking is generally regarded as an unavoidable consequence of martensitic transformation in polycrystalline ZrO2-based ceramics. This shortcoming has limited ZrO2-based shape-memory ceramics (SMCs) to micron-sized single- or oligo-crystals to reduce bulk transformation stresses. In this paper we explore an alternate approach to reduce transformation-induced cracking by manipulating the crystallographic phase compatibility in polycrystalline ZrO2-CeO2 ceramics. For a range of compositions 12.5–15 mol% CeO2, we present lattice parameter measurements for the tetragonal and monoclinic phases from in situ X-ray diffraction, direct observation of lattice correspondences by electron backscatter diffraction, and calculations of interface and bulk compatibility. We identify ZrO2-13.5 mol% CeO2 as having preferred interface compatibility in that it closely meets the crystallographic cofactor conditions. This composition resists cracking through 10 thermal cycles, whereas other compositions all crack. These results suggest that interface compatibility may contribute more strongly to transformation-induced cracking in ZrO2-based SMCs than previously believed and opens a strategy for designing crack-resistant polycrystalline SMCs.
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