摘要
Polycrystalline bulk samples of Ti{sub 3}SiC{sub 2} were fabricated by reactively hot-pressing Ti, graphite, and SiC powders at 40 MPa and 1,600 C for 4 h. This compound has remarkable properties. Its compressive strength, measured at room temperature, was 600 MPa, and dropped to 260 MPa at 1,300 C in air. Although the room-temperature failure was brittle, the high-temperature load-displacement curve shows significant plastic behavior. The oxidation is parabolic and at 1,000 and 1,400 C the parabolic rate constants were, respectively, 2 {times} 10{sup {minus}8} and 2 {times} 10{sup {minus}5} kg{sup 2}{center_dot}m{sup {minus}4}{center_dot}s{sup {minus}1}. The activation energy for oxidation is thus {approx}300 kJ/mol. The room-temperature electrical conductivity is 4.5 {times} 10{sup 6} {Omega}{sup {minus}1}{center_dot}m{sup {minus}1}, roughly twice that of pure Ti. The thermal expansion coefficient in the temperature range 25 to 1,000 C, the room-temperature thermal conductivity, and the heat capacity are respectively, 10 {times} 10{sup {minus}6} C{sup {minus}1}, 43 W/(m{center_dot}K), and 588 J/(kg{center_dot}K). With a hardness of 4 GPa and a Young`s modulus of 320 GPa, it is relatively soft, but reasonably stiff. Furthermore, Ti{sub 3}SiC{sub 2} does not appear to be susceptible to thermal shock; quenching from 1,400 C into water does not affect the postquench bend strength.more » As significantly, this compound is as readily machinable as graphite. Scanning electron microscopy of polished and fractured surfaces leaves little doubt as to its layered nature.« less