光电探测器
材料科学
钙钛矿(结构)
光电子学
响应度
光电导性
带隙
卤化物
半导体
热稳定性
铋
纳米技术
化学工程
化学
无机化学
冶金
工程类
作者
Liuyuan Han,Peng Wang,Zeyan Wang,Yuanyuan Liu,Zhaoke Zheng,Hefeng Cheng,Baibiao Huang
标识
DOI:10.1016/j.jallcom.2021.162347
摘要
Recently, bismuth-based hybrid organic-inorganic halide perovskite-like materials have attracted great attention due to their friendly and safely processing, chemical stability, and photoconductive properties. Here, we report a simple method to prepare a new lead-free hybrid material of hydrazine iodobismuthate (HyBI) with semiconductor properties, adopting zero-dimensional (0D) perovskite-like structure, and its crystal, thermal, bandgap, and optoelectronic properties were explored. It is noteworthy that HyBI has a direct bandgap of 1.99 eV, carries mobility as high as 64.2 cm2V−1s−1, charge-trap density of 2.32 × 1010 cm−3. Moreover, self-powered photodetector devices were fabricated using HyBI, which showed the responsivity under 470 nm was 7.63 mA/W. This work highlights the material as a promising candidate for lead-free optoelectronic applications.
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