材料科学
钝化
钙钛矿(结构)
光电子学
硅
串联
带隙
电压
开路电压
工程物理
纳米技术
图层(电子)
化学
电气工程
物理
结晶学
复合材料
工程类
作者
Rui Xia,Yibo Xu,Bingbing Chen,Hiroyuki Kanda,Marius Franckevičius,Marius Franckevičius,Kai Wang,Yifeng Chen,Daming Chen,Jianning Ding,Xiaoshuang Zhou,Ying Zhao,Cristina Roldán‐Carmona,Xiaodan Zhang,Paul J. Dyson,Mohammad Khaja Nazeeruddin
出处
期刊:Journal of materials chemistry. A, Materials for energy and sustainability
[The Royal Society of Chemistry]
日期:2021-01-01
卷期号:9 (38): 21939-21947
被引量:23
摘要
Stable wide bandgap (1.698 eV) perovskite devices achieving efficiencies of 19.67%, and open circuit voltages ( V oc ) above 1.2 V, and their integration into tandem n-i-p top perovskite silicon cells with 24% PCE for.
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