材料科学
神经形态工程学
库仑阻塞
电阻随机存取存储器
光电子学
非易失性存储器
计算机科学
随机存取存储器
氧化铟锡
计算机数据存储
纳米颗粒
纳米技术
晶体管
电极
电气工程
化学
计算机硬件
电压
图层(电子)
机器学习
工程类
物理化学
人工神经网络
作者
Lu Wang,Hongyu Zhu,Dianzhong Wen
标识
DOI:10.1021/acs.jpclett.1c02815
摘要
Gold nanoparticles (Au NPs) have good biocompatibility and special quantum effects. In this Letter, we embedded Au NPs into silkworm hemolymph (SH) to improve the performance of the device and fabricated Al/SH:Au NPs/indium tin oxide (ITO)/glass resistive random access memory. The device exhibits a bipolar switching behavior with a retention time of 104 s. Compared with the Al/SH/ITO device without Au NPs, the device has a higher ON/OFF current ratio (>105) and a smaller Vreset. The improvement in device performance is attributed to the fact that Au NPs act as the electron-trapping center in the device; a Coulomb blockade occurs after electrons are trapped, thereby increasing the resistance of the device in the high-resistance state. Using optimized devices can realize multilevel data storage and can also simulate synaptic characteristics such as potentiation and depression. The device is expected to be applied to high-density, low-cost, degradable, and biocompatible storage devices and neuromorphic computing in the future.
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