Low temperature PECVD SiNx films applied in OLED packaging

Plasma Enhanced Chemical Vapor Deposition (PECVD) SiNx films deposited at the substrate temperatures from 20 to 180 °C and at the RF powers from 10 to 30 W were investigated. It is found that the films' properties such as density, refractive index, composition and bonding configuration are varied with the substrate temperature and RF power. The moisture resistant ability of the deposited SiNx films was investigated by the water vapor permeation (WVP) measurement. Even at the low substrate temperature such as 50 °C, the moisture resistance of SiNx films keeps quite good. Our results can be applied in Organic Light Emitting Devices (OLED) packaging effectively.