带隙基准
比克莫斯
电源抑制比
线路调节
输入偏移电压
电气工程
电压
运算放大器
偏移量(计算机科学)
电子线路
放大器
补偿(心理学)
电子工程
电压基准
光电子学
材料科学
CMOS芯片
工程类
计算机科学
晶体管
跌落电压
心理学
程序设计语言
精神分析
作者
P. Malcovati,Franco Maloberti,C. Fiocchi,M. Pruzzi
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2001-07-01
卷期号:36 (7): 1076-1081
被引量:348
摘要
We present a bandgap circuit capable of generating a reference voltage of 0.53 V. The circuit, implemented In a submicron BiCMOS technology, operates with a supply voltage of 1 V, consuming 92 /spl mu/W at room temperature. In the bandgap circuit proposed, we use a nonconventional operational amplifier which achieves virtually zero systematic offset, operating directly from the 1-V power supply. The bandgap architecture used allows a straightforward implementation of the curvature compensation method. The proposed circuit achieves 7.5 ppm/K of temperature coefficient and 212 ppm/V of supply voltage dependence, without requiring additional operational amplifiers or complex circuits for the curvature compensation.
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