Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few layer ReS 2 are demonstrated. The transistor based on few layer ReS 2 shows an n‐type behavior with the mobility of about 40 cm 2 V −1 s −1 and on/off ratio of 10 5 . The polarization dependence of photoresponse is ascribed to the unique anisotropic in‐plane crystal structure, consistent with the optical absorption anisotropy. The linear dichroic photodetection with a high photoresponsivity reported here demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for the applications of 2D materials for light polarization detection.