制作
晶体管
原子层沉积
材料科学
电子束光刻
抛光
平版印刷术
图层(电子)
沉积(地质)
光电子学
隧道枢纽
电子
化学机械平面化
纳米技术
阻挡层
抵抗
量子隧道
复合材料
电气工程
物理
电压
古生物学
病理
医学
量子力学
生物
替代医学
沉积物
工程类
作者
Golnaz Karbasian,Alexei O. Orlov,Gregory L. Snider
出处
期刊:Journal of vacuum science and technology
[American Vacuum Society]
日期:2015-10-05
被引量:6
摘要
The fabrication is reported of nanodamascene metallic single electron transistors that take advantage of unique properties of chemical mechanical polishing and atomic layer deposition. Chemical mechanical polishing provides a path for tuning the dimensions of tunnel junctions by adjusting the polish time, surpassing the limits imposed by electron beam lithography and lift-off, while atomic layer deposition provides precise control over the thickness of the tunnel barrier and significantly increases the choices for barrier materials. Single-electron transistor operation of a prototype device was successfully demonstrated at T < 1 K.
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