材料科学
选择性激光熔化
激光器
再结晶(地质)
平面的
镍
纹理(宇宙学)
晶界
复合材料
熔点
同种类的
光电子学
光学
微观结构
冶金
古生物学
物理
计算机图形学(图像)
图像(数学)
人工智能
计算机科学
生物
热力学
作者
Dennis Edgard Jodi,Tomonori Kitashima,Yuichiro Koizumi,Takayoshi Nakano,Makoto Watanabe
标识
DOI:10.1016/j.addlet.2022.100066
摘要
The exploration of flat-top laser profile in fabricating a single crystal (SX) structure using selective laser melting (SLM) in pure Ni was investigated. Optimization of the parameters led to the formation of a planar melt pool. A homogeneous near-{001}<100> texture with suppressed high-angle grain boundary (HAGB) in high building heights of >20 mm was achieved without an SX seed. In addition, the planar melt pool suppressed the geometrically necessary dislocation accumulation and prevented strain-induced continuous dynamic recrystallization that could cause HAGB formation. Thus, an SX structure with homogeneous near-{001}<100> texture and suppressed HAGB was successfully achieved without an SX seed.
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