Transfer- and lithography-free CVD of N-doped graphenic carbon thin films on non-metal substrates

Although CVD is a very promising approach to the synthesis of nitrogen-doped graphenic carbon thin films (N-GCTFs), the vast majority of methods require the use of a metal catalyst, and a post-deposition transfer process, which complicates the technology, as well as damages and contaminates the films. Here, we described a simple, low-cost and scalable approach for the completely direct (transfer- and lithography-free) deposition of N-GCTFs on dielectric substrates through pyrolysis of acetonitrile (CH3CN). GCTFs are defined as multi-layer graphene films with few-nm thickness. The N/C ratio is about 2–3%, and nitrogen is mainly contained in the graphitic form. Raman spectroscopy and TEM indicate a nanocrystalline structure of the films. The values of transmittance and sheet resistance are found significantly depending on the synthesis temperature and time. The films can be grown selectively on the e-beam pre-patterned areas of the substrates. We demonstrate this by lithography-free growing of N-GCTF microstructure.