High‐Performance Pentacene‐Based Field‐Effect Transistor Memory Using the Electrets of Polymer Blends

Abstract Organic field‐effect transistor (OFET) memory based on pentacene has attracted a lot of attentions due to its promising prospect of application in flexible electronics, while the high programming/erasing (P/E) gate voltages due to the existence of hole barrier at pentacene/polymer interface leaves great challenges for its commercial applications. A high‐performance pentacene‐based OFET nonvolatile memory (ONVM) with polymer blends is reported here as the charge‐trapping layer containing poly(2‐vinyl naphthalene) (PVN) and poly{[ N , N '‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5'‐(2,2'‐bithiophene)} (N2200). The presence of N2200, an n‐type semiconductor, in blends significantly improves the memory performance of pentacene‐based memory devices based on the static‐electric effect. The electrons in N2200 are aggregated near the pentacene/polymer interface due to the electric attraction from the positively charged defects in pentacene. Furthermore, those electrons reduce the height of hole barrier and produce local easy‐transportation paths for holes between pentacene and PVN, which enables the electret‐based ONVM device with low P/E voltages, fast P/E speeds, large mobility and stable multilevel data‐storage ability in ambient air.