Increasing of the ON-state current of 5.1 nm MoTe2 in-plane Schottky barrier field-effect transistors by O-passivation and W-doping

Through first-principles calculations, we demonstrate that the combined application of tungsten doping (W-doping) and oxygen passivation (O-passivation) can well make the Schottky barrier field-effect transistors (SBFETs) based on MoTe2 with 1 T–2H–1 T structure represent an excellent candidate for application in 5.1 nm SBFETs. Our results show that: W-doping in the channel 2H–MoTe2 near the source of the intrinsic MoTe2–SBFET can make ION increased just slightly as the number of W-doping increases, but the ION is still lower than 900 uA/um (the ON-state currents requirement of ITRS) when the number of W-doping is to 4 periods(4P), so W-doping is not an ideal method to increase ION; the ION of the MoTe2–SBFET can be increased from 642.2 uA/um to 941.7 uA/um by the combined application of W-doping and O-passivation which meet the ON-state currents requirement of ITRS.