X射线光电子能谱
蚀刻(微加工)
材料科学
薄脆饼
光电子学
反应离子刻蚀
分析化学(期刊)
氧化物
干法蚀刻
磁滞
等离子体刻蚀
半导体
图层(电子)
纳米技术
化学
化学工程
物理
工程类
量子力学
冶金
色谱法
作者
Thibaut Meyer,Sarah Boubenia,C. Petit-Etienne,B. Salem,E. Pargon
出处
期刊:Journal of vacuum science and technology
[American Vacuum Society]
日期:2022-11-17
卷期号:40 (6)
摘要
Controlling the plasma etching step involved in metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) GaN fabrication is essential for device performance and reliability. In particular, understanding the impact of GaN etching conditions on dielectric/GaN interface chemical properties is critically important. In this work, we investigate the impact of the carrier wafers (Si, photoresist, SiO2, and Si3N4) used during the etching of GaN in chlorine plasma on the electrical behavior of Al2O3/n-GaN metal–oxide–semiconductor (MOS) capacitors. X-ray Photoelectron spectroscopy (XPS) analyses show that the Al2O3/GaN interface layer contains contaminants from the etching process after the Al2O3 deposition. Their chemical nature depends on the plasma chemistry used as well as the chemical nature of the carrier wafer. Typically, Cl and C are trapped at the interface for all substrates. In the particular case of Si carrier wafer, a significant amount of SiOx is present at the Al2O3/GaN interface. The capacitance–voltage (C–V) characteristics of the MOS capacitors indicate that the presence of Si residues at the interface shifts the flat band voltage to negative values, while the presence of Cl or C at the interface increases the hysteresis. We demonstrate that introducing an in situ plasma cleaning treatment based on N2/H2 gas, before the atomic layer deposition, allows the removal of most of the residues except silicon and suppresses the hysteresis.
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