Magnetic anisotropy of Fe/MgO interfaces inserted with alkali halide layers

Perpendicular magnetic anisotropy (PMA) at the Fe/MgO interface has been widely studied for memory applications, and further improving PMA has been one of the central challenges. In this study we fabricate epitaxial Fe/alkali halide (LiF, NaCl, or CsI)/MgO multilayers using molecular beam epitaxy and investigate how the alkali halide layer insertion can enhance PMA at the Fe/MgO interface. We find that insertion of an ultrathin LiF layer (0.1--0.4 nm) enhances interfacial PMA, but thicker LiF layer insertion (0.6--1 nm) weakens it. For the CsI and NaCl cases, interfacial PMA energy decreases monotonically with CsI or NaCl thickness. The present results indicate that well-defined Fe-anion orbital hybridization achieved by good lattice matching between the Fe and insulator layers is essential to have strong PMA. It is also suggested that anion atoms with high electronegativities, such as F, are beneficial for interfacial PMA, probably because of the weaker Fe-F hybridization and stronger electron localization at the interface. Our study shall serve as a guiding principle for designing a new dielectric layer to achieve stronger PMA in ultrathin Fe films.