光电子学
光电探测器
铁电性
材料科学
响应度
光探测
半导体
暗电流
石墨烯
肖特基势垒
异质结
纳米技术
二极管
电介质
作者
Xinling Liu,Guangjian Wu,Jinhua Zeng,Chongyang Bai,Wenwu Li,Jianlu Wang,Junhao Chu
摘要
The proliferation of visual information promoted in part by the Internet of Things is increasing demand for high-quality imaging, which in turn imposes more stringent physical requirements on photodetectors. Given that dark current is a significant figure of merit for photodetectors, we report herein a vertical ferroelectric semiconductor junction based on two-dimensional α-In2Se3 that suppresses the dark current and, thereby, enhances photodetection sensitivity. By utilizing the tight coupling between the ferroelectric and semiconductor properties of α-In2Se3, the two-terminal graphene-ferroelectric semiconductor–graphene crossbar structure demonstrates typical memristive behavior. The conductance, reflecting the dark current, is effectively regulated by modulating the height of the out-of-plane ferroelectric polarization-induced Schottky barrier height modulation between α-In2Se3 and graphene. As a result, the dark current is suppressed to 14 nA when α-In2Se3 is polarized down, which is a 50-fold decrease from 660 nA of dark current when α-In2Se3 is polarized up. Furthermore, α-In2Se3 exhibits excellent optoelectronic properties, demonstrating a high responsivity of 4.3 × 104 A/W, a fast response speed of 43 μs, and a broadband response spectrum from the visible to 980 nm. The combination of semiconductor and ferroelectric properties means that such devices may be used in self-powered, broadband, and highly integrated optoelectronic platforms.
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