Electron structure and defect co-modulation to boost zinc storage performance of urchin-like VS4-based microspheres as advanced cathodes for aqueous Zn-ion batteries

阴极 化学工程 电化学 材料科学 电解质 水溶液 电导率 电极 化学 冶金 有机化学 物理化学 工程类
作者
Xinyi Zhou,Yuanxia Li,Ji Chen,Qiaoji Zheng,Yu Huo,Fengyu Xie,Dunmin Lin
出处
期刊:Chemical Engineering Journal [Elsevier]
卷期号:471: 144738-144738 被引量:4
标识
DOI:10.1016/j.cej.2023.144738
摘要

Recently, aqueous zinc ion batteries (AZIBs) have been widely favored for their intrinsic safety, low cost and environmental friendliness; however, the vast volume expansion, poor electrical conductivity and low-density zinc insertion and extraction channels of the cathodes cannot meet the requirements of practical application for AZIBs. Herein, urchin-like Co-doped VS4 microspheres (Co-VS4-δ-x) with the co-regulation of electron structure and defect have been developed and synthesized by a one-step solvothermal procedure as an advanced cathode material for AZIBs. The introduction of active multivalent Co ions achieves the interfacial charge rearrangement of Co-VS4-δ-x electrode and the widening of the layer spacing to reduce the transfer resistance and interfacial attraction of Zn2+ between the layers. Moreover, the formation of sulfur defects shortens the Zn2+ transport distance and enhances the electrical conductivity and electrochemical kinetics of Co-VS4-δ-x material. In addition, the urchin-like micromorphology of the material dramatically increases the contact area between electrolyte and electrode material and the active sites of electrochemical reaction. Based on the above advantages, the zinc storage performance of Co-VS4-δ-x has been greatly enhanced, delivering the specific capacities of 306.4 mAh g−1 and 270.7 mAh g−1 at 0.5A g−1 and 5A g−1, respectively, and exhibiting excellent cycling stability with the capacity retention of 87.0% after 3000 cycles at 5 A g−1. This investigation proposes an effective strategy to develop high-performance vanadium-based cathodes for AZIBs by charge rearrangement, defect modulation and morphology optimization.
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