Low-temperature metallization & interconnection for silicon heterojunction and perovskite silicon tandem solar cells

In this work, we present results on various low-temperature approaches for the metallization and interconnection of high-efficiency solar cells as silicon heterojunction (SHJ) or perovskite silicon tandems. By using fine line screen printing for the cell metallization and Ag-free or -reduced interconnection technologies, we demonstrate the potential of these approaches both for SHJ and perovskite silicon tandem cells. Furthermore, low-temperature (LT, ∼200 °C) or ultra-low-temperature (ULT, ∼150 °C) processes are utilized for metallization and interconnection to treat these temperature-sensitive solar cells with a reduced energy consumption. We compare LT soldering of SHJ cells with Pb-free alloys to state-of-the-art soldering processes and interconnection with electrically conductive adhesives (ECAs). For successful module integration of perovskite silicon tandem solar cells, these findings provide the basis to build full-size tandem modules with different interconnection technologies.