光电探测器
单层
光电子学
兴奋剂
材料科学
极化(电化学)
空位缺陷
光学
分子物理学
凝聚态物理
化学
物理
纳米技术
物理化学
作者
Xi Fu,Jianbo Lin,Guangyao Liang,Wenhu Liao,Jiyuan Guo,Xiaowu Li
标识
DOI:10.1016/j.cplett.2023.140854
摘要
In this paper, we proposed a self-powered photodetector driven by the photogalvanic effect based on the predicted C2P4 monolayer which has excellent electronic and mechanical properties. We focused on the tuning of photogalvanic effect by creating vacancy-defects and substitution doping using the DFT combined with Keldysh nonequilibrium green's function formalism. We found that the photocurrents produced by the photogalvanic effect mainly show cosine dependence on the polarization angle of incident light, and the vacancy-defects and substitution-doping can increase the magnitude of photocurrents, corresponding to the enhancement of photogalvanic effect in the C2P4 photodetector. Moreover, the C2P4 photodetector possesses high extinction ratio, showing it is highly desirable for polarization detection applications. Our work reveals promising applications of the C2P4 monolayer for self-powered and low energy-consumption photogalvanic effect driven optoelectronics devices.
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