铁电性
多铁性
压电
材料科学
小型化
凝聚态物理
磁化
杰纳斯
极化(电化学)
反铁磁性
铁磁性
堆积
纳米技术
工程物理
光电子学
物理
磁场
电介质
核磁共振
化学
复合材料
物理化学
量子力学
作者
Yunqin Li,Xian Zhang,Xiao Shang,Qiwen He,Dai-Song Tang,Xiaochun Wang,Chun‐Gang Duan
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-10-19
卷期号:23 (21): 10013-10020
被引量:12
标识
DOI:10.1021/acs.nanolett.3c03238
摘要
The realization of multiferroic materials offers the possibility of multifunctional electronic device design. However, the coupling between the multiferroicity and piezoelectricity in Janus materials is rarely reported. In this study, we propose a mechanism for manipulating valley physics by magnetization reversing and ferroelectric switching in multiferroic and piezoelectric material. The ferromagnetic VSiGeP4 monolayer exhibits a large valley polarization up to 100 meV, which can be effectively operated by reversing magnetization. Interestingly, the antiferromagnetic VSiGeP4 bilayers with AB and BA stacking configurations allow the coexistence of valley polarization and ferroelectricity, supporting the proposed strategy for manipulating valley physics via ferroelectric switching and interlayer sliding. In addition, the VSiGeP4 monolayer contains remarkable tunable piezoelectricity regulated by electron correlation U. This study proposes a feasible idea for regulating valley polarization and a general design idea for multifunctional devices with multiferroic and piezoelectric properties, facilitating the miniaturization and integration of nanodevices.
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