材料科学
X射线光电子能谱
涂层
法拉第效率
介电谱
化学工程
硅
阳极
拉曼光谱
电极
电解质
纳米技术
电化学
冶金
化学
工程类
物理化学
物理
光学
作者
Khryslyn Araño,Guang Yang,Beth L. Armstrong,Tolga Aytuǧ,Matthew Chambers,Ethan C. Self,Harry M. Meyer,Joseph Quinn,James F. Browning,Chongmin Wang,Gabriel M. Veith
出处
期刊:ACS applied energy materials
[American Chemical Society]
日期:2023-10-17
卷期号:6 (21): 11308-11321
被引量:7
标识
DOI:10.1021/acsaem.3c02205
摘要
Previous studies have demonstrated that chemical vapor deposition carbon coating on silicon (Si@C) can enhance the electrochemical performance of lithium-ion batteries with Si-based anodes. However, the underlying mechanisms contributing to this improvement have not been fully explored. We address this knowledge gap by applying a suite of characterization methods to evaluate Si@C anodes prepared by reducing acetylene on ball-milled Si particles. Raman mapping measurements show that the C coating (<5 nm thick) enables a homogeneous Si and carbon distribution during the slurry casting process, thereby promoting Si utilization during cycling. The coating's microstructure and morphology were evaluated using X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy, and neutron reflectivity experiments. Electrochemical impedance spectroscopy measurements upon cycling indicate that carbon coating also reduces the overall resistance as benchmarked against bare Si anodes. Galvanostatic cycling in half-cell studies revealed higher initial Coulombic efficiency and specific capacities with increasing carbon coating time. However, solid electrolyte interphase (SEI) investigations using XPS showed that the coated and uncoated samples have very similar characteristics, suggesting that the SEI may only play a minor role in enhancing the performance of Si@C. Full-cell evaluation of the Si electrodes was consistent with half-cell results relating to performance and SEI properties, further supporting the conclusion that electronic and ionic percolation, enabled by effective electrode manufacturing, are the dominant factors contributing to the favorable performance of Si@C.
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