Cross-domain growth and angle-dependent interlayer coupling of twisted bilayer MoS2

Twisted 2D transition metal dichalcogenides (TMDCs) play a significant role in the development of twistronics. However, it is still challenging to prepare high-quality twisted TMDCs by current stacking or folding techniques. Herein, we propose a cross-domain chemical vapor deposition method to synthesize twisted bilayer MoS2 through precisely controlling the supply of molybdenum precursor. It is found that the top layer of a bilayer MoS2 grain maintains its original orientation even when it crosses over to neighboring monolayer MoS2 grain. This suggests that the van der Waals epitaxy can be prevented with the assistance of covalent bonds. Furthermore, the interlayer coupling strength reaches a maximum value at the twisted angle (θ) of 0° or 60° and a minimum at θ = 30°. Moreover, the evolution of in-plane shear mode and out-of-plane breathing mode obtained from low-frequency Raman spectroscopy reveals atomic reconstructions of the moiré pattern. Meanwhile, the shift of the indirect bandgap exhibits an angle dependence consistent with the interlayer coupling strength, which likely comes from the mixing of pz orbitals. The change in A−/A intensity ratio is not mainly originated from the trion binding energy, but the excess electron concentration. Our results offer a feasible approach to prepare high-quality twisted TMDCs and provide a good platform for studying twistronics and related phenomena.