磁阻随机存取存储器
隧道磁电阻
缩放比例
小型化
堆栈(抽象数据类型)
干扰(通信)
材料科学
电压
磁存储器
磁场
电磁干扰
电气工程
光电子学
物理
电子工程
凝聚态物理
计算机科学
随机存取存储器
铁磁性
工程类
纳米技术
频道(广播)
几何学
量子力学
程序设计语言
数学
计算机硬件
作者
T. Shinoda,Junta Igarashi,Butsurin Jinnai,Shunsuke Fukami,Hideo Ohno
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2024-02-01
卷期号:45 (2): 184-187
被引量:1
标识
DOI:10.1109/led.2023.3345743
摘要
Magnetic tunnel junction (MTJ) miniaturization has been demonstrated down to 2 nm with performance applicable to a wide variety of applications. In highly dense STT-MRAM, where such ultra-small MTJs are packed with tight pitches, magnetostatic interference from neighboring bits becomes a concern. In this study, we investigate the impact of magnetostatic interference on the ultra-small MTJs with various stack structures when integrated in highly dense arrays and discuss the scaling prospect. We first calculate the stray fields exerted on an MTJ from neighboring bits and then evaluate the tolerance of the MTJ against the field by measuring the external field dependence of the switching voltage of isolated MTJs. We find that STT-MRAM using the ultra-small MTJs has the potential to achieve a large capacity above 100 Gbit/cm 2 with a reasonably small variation in switching voltage. This work provides pitch scaling prospects toward high-density STT-MRAM with ultra-small MTJs.
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