Scalable ferroelectricity of 20 nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes

铁电性 材料科学 电极 薄膜 光电子学 电场 溅射 溅射沉积 极化(电化学) 纳米技术 电介质 冶金 化学 量子力学 物理 物理化学
作者
Reika Ota,Shinnosuke Yasuoka,Ryoichi Mizutani,Takahisa Shiraishi,K. Okamoto,Kuniyuki Kakushima,Tomoyuki Koganezawa,Osami Sakata,Hiroshi Funakubo
出处
期刊:Journal of Applied Physics [American Institute of Physics]
卷期号:134 (21) 被引量:1
标识
DOI:10.1063/5.0166288
摘要

Ferroelectric (Al, Sc)N thin films have the potential for use in low-power memory applications. This study demonstrates the thickness scalability of ferroelectricity down to an approximately 20 nm-thick (Al0.8Sc0.2)N film sandwiched between microfabricable TiN electrodes. The impact of the deposition gas atmosphere during the sputtering process and the top electrode materials on the crystal structures and ferroelectric properties was investigated for 20–30 nm-thick (Al0.8Sc0.2)N thin films deposited on Si substrates covered with a TiN layer by radio frequency magnetron sputtering. The deposition atmosphere did not strongly affect the crystal structures of the 30 nm-thick (Al0.8Sc0.2)N films but significantly affected their ferroelectric properties. The leakage current density decreased for films deposited under pure N2 gas compared to the films deposited under a gas mixture of 0.67Ar + 0.33N2. The ferroelectric properties of 20 nm-thick (Al0.8Sc0.2)N films were changed by the top electrode materials; both the switching electric field and its maximum applicable electric field increased for the TiN top electrodes compared with the Pt top electrodes, improving the saturation characteristics of the remnant polarization (Pr) against the applied electric field. Consequently, the 20 nm-thick (Al0.8Sc0.2)N film sandwiched between the microfabricable TiN top and bottom electrodes showed ferroelectricity without noticeable degradation with decreasing film thickness; the film maintained large Pr values of over 100 μC/cm2 in the temperature range from room temperature to 150 °C. The present data open the door to scalable ferroelectric random-access memories using almost thickness-degradation-free thin (Al, Sc)N films with microfabricable TiN electrodes.
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