Enhancement of superior dielectric performance in ZnTiNb2O8 systems by multi‐layer architecture

Abstract Zn 0.995 Cu 0.005 TiNb 2 O 8 @TiO 2 mixed ceramics and Zn 0.995 Cu 0.005 TiNb 2 O 8 ‐TiO 2 ‐Zn 0.995 Cu 0.005 TiNb 2 O 8 layered ceramics with different TiO 2 contents were designed and manufactured to adjust the microwave dielectric performances of Zn 0.995 Cu 0.005 TiNb 2 O 8 /TiO 2 composite ceramics. The effects of random distribution and laminated co‐firing processes on the microwave dielectric properties of the ZnTiNb 2 O 8 systems were fully investigated and compared. During the random distribution process, the compound transforms from the original ZnTiNb 2 O 8 phase to the Zn 0.17 Nb 0.33 Ti 0.5 O 2 phase with the increase of TiO 2 content. Its value can be adjusted to near zero, but its Q × f value decreases severely. For the laminated co‐firing process, the distinctive tri‐layer architecture allows the reaction between Zn 0.995 Cu 0.005 TiNb 2 O 8 and TiO 2 to be limited to a narrow region of about 20 µm width and can play a role similar to that of “glue” to connect the layers well. The process significantly minimizes the probability of Q × f values deteriorating. Compared with the random distribution Zn 0.995 Cu 0.005 TiNb 2 O 8 @TiO 2 , the Q × f value of the tri‐layer architecture ceramics is improved by about 85% with no significant decrease in dielectric permittivity while ensuring high‐temperature stability. When stacked with 0.04 wt% TiO 2 , the Zn 0.995 Cu 0.005 TiNb 2 O 8 ‐TiO 2 ‐Zn 0.995 Cu 0.005 TiNb 2 O 8 tri‐layer architecture ceramic exhibits superior dielectric properties: = 39.96, Q × f = 51,987 GHz, and = ‐1.31 ppm/°C.