A Study on the Fabrication Procedure for a High-D/Ti-Ratio-Deuterated-Titanium Film on the Disk-Type Neutron Generator Target

材料科学 薄膜 中子发生器 吸附 表面粗糙度 基质(水族馆) 分析化学(期刊) 中子 复合材料 中子源 冶金 纳米技术 化学 原子物理学 色谱法 有机化学 物理 量子力学 海洋学 地质学
作者
Wonsik Jung,Jaehyo Kim,Geehyun Kim
出处
期刊:Nuclear Instruments and Methods in Physics Research [Elsevier BV]
卷期号:: 169331-169331
标识
DOI:10.1016/j.nima.2024.169331
摘要

This study aims to present thin film deposition and deuterium adsorption procedure to fabricate disk-type targets with high D/Ti values for a neutron generator and increase their lifespan. The neutron target consists of a titanium thin film with hydrogen loading, and a copper substrate for heat removal. We optimized the incident deuterium ion beam energy and thin film thickness using Geant4 simulations. Additionally, we calculated the expected neutron yield under the optimized conditions. The hydrogen adsorption conditions were optimized by comparing the H/Ti results as per hydrogen adsorption temperature and loading time using titanium foils of different thickness values. Hydrogen (or deuterium) adsorption ratio is strongly influenced by the surface condition and the deposition conditions of the thin film. A titanium film was deposited in various conditions of plasma DC power and substrate temperature. The quality of the thin film was evaluated through surface roughness evaluation and thin film sheet resistance for each deposition conditions. Subsequently, the hydrogen adsorption results were compared according to the quality of the thin titanium films, and the thin titanium film deposition conditions with the highest hydrogen adsorption ratio were confirmed. The selected conditions were applied to conduct deuterium adsorption. In conclusion, this study underscores the critical relationship between thin film quality and hydrogen (or deuterium) adsorption ratio, reinforcing the importance of optimizing thin film deposition parameters for the design of neutron generator disk-type targets with high quality of film and extended lifespan.
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