单层
辐射传输
库仑
过渡金属
发光
电介质
凝聚态物理
材料科学
载流子密度
无辐射复合
原子物理学
化学物理
化学
分子物理学
物理
半导体
纳米技术
光电子学
半导体材料
兴奋剂
光学
量子力学
生物化学
催化作用
电子
作者
J. Hader,Jerome V. Moloney
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-04-19
卷期号:24 (17): 5231-5237
标识
DOI:10.1021/acs.nanolett.4c00705
摘要
The carrier losses due to radiative recombination in monolayer transition metal dichalcogenides are studied using fully microscopic many-body models. The density- and temperature-dependent losses in various Mo- and W-based materials are shown to be dominated by Coulomb correlations beyond the Hartree–Fock level. Despite the much stronger Coulomb interaction in 2D materials, the radiative losses are comparable–if not weaker–than in conventional III–V materials. A strong dependence on the dielectric environment is found in agreement with experimental results.
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