氧化物
电介质
材料科学
晶体管
金属
光电子学
栅极电介质
栅氧化层
金属浇口
纳米技术
电气工程
冶金
工程类
电压
作者
Daobing Zeng,Ziyang Zhang,Zhongying Xue,Miao Zhang,Paul K. Chu,Yongfeng Mei,Ziao Tian,Zengfeng Di
出处
期刊:Nature
[Springer Nature]
日期:2024-08-07
标识
DOI:10.1038/s41586-024-07786-2
摘要
Abstract Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors 1–4 . However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties 3,5,6 . Here we demonstrate the fabrication of atomically thin single-crystalline Al 2 O 3 (c-Al 2 O 3 ) as a high-quality top-gate dielectric in 2D FETs. By using intercalative oxidation techniques, a stable, stoichiometric and atomically thin c-Al 2 O 3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface at room temperature. Owing to the favourable crystalline structure and well-defined interfaces, the gate leakage current, interface state density and dielectric strength of c-Al 2 O 3 meet the International Roadmap for Devices and Systems requirements 3,5,7 . Through a one-step transfer process consisting of the source, drain, dielectric materials and gate, we achieve top-gate MoS 2 FETs characterized by a steep subthreshold swing of 61 mV dec −1 , high on/off current ratio of 10 8 and very small hysteresis of 10 mV. This technique and material demonstrate the possibility of producing high-quality single-crystalline oxides suitable for integration into fully scalable advanced 2D FETs, including negative capacitance transistors and spin transistors.
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