A Weak DC-Drift Silicon/Lithium Niobate Heterogeneous Integrated Electro-Optical Modulator

We demonstrate a high-performance modulator with weak bias-drift effect based on wafer-scale heterogeneous SOI/TFLN integration. The fabricated device exhibits a stable V π L of around 2.9 V·cm and support 176 Gbit/s for PAM4 signal transmission.