神经形态工程学
材料科学
可重构性
晶体管
控制重构
光电子学
调制(音乐)
纳米技术
计算机科学
电气工程
嵌入式系统
电压
人工神经网络
机器学习
工程类
哲学
美学
电信
作者
Yuxuan Zhang,Jingwen Wang,Pengshan Xie,You Meng,He Shao,Chengchao Jin,Boxiang Gao,Shen Yi,Quan Quan,Yezhan Li,Weijun Wang,Dengji Li,Zenghui Wu,Bowen Li,SenPo Yip,Jia Sun,Johnny C. Ho
标识
DOI:10.1002/adma.202412210
摘要
Abstract Reconfigurable devices with field‐effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next‐generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p‐type disordered tellurium oxide is introduced that realizes dual‐mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser‐induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high‐performance p‐type characteristics with a field‐effect hole mobility of 10.02 cm 2 V −1 s −1 and an I on / I off ratio exceeding 10 6 in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue‐to‐ultraviolet light. Finally, in‐sensor denoising and invisible image recognition in static and dynamic scenarios are achieved.
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